Low Temperature Physics: 24, 119 (1998); https://doi.org/10.1063/1.593553 (2 pages)
Физика Низких Температур: Том 24, Выпуск 2 (Февраль 1998), c. 163-165    ( к оглавлению , назад )

Mapping of 2D contact perturbations by electrons on a helium film

E. Teske,P. Wyder

Grenoble High Magnetic Field Laboratory, Max-Plank Institut fur Festkorperforschung Centre National de la Recherche Scientifique, B.P.166, F-38042, Grenoble, Cedex 9, France

P. Leiderer

Fakultet fur Physik, Universitet Konstanz, D-78434 Konstanz, Germany

V. Shikin

Institute of Solid State Physics, 142432 Chernogolovka, Moscow District, Russia
E-mail: shikin@issp.ac.ru

Аннотация

A promising way to investigate 2D contact phenomena is proposed. This method is based on the idea of depositing surface state electrons (SSE) on a thin layer of liquid helium covering the surface of a solid sample containing a 2D charge carrier system. The density of SSE adjusts to screen contact-induced perturbations of the electrostatic potential across the sample. As a result, the helium layer thickness varies due to the variation of the electrostatic pressure, thus providing a map. This map may be read off interferometrically by a technique already employed for the investigation of multi-electron dimples on helium. We have realized this mapping for a structured electrode as a test sample to demonstrate the resolution of the method.

PACS:
67.40.-w - Boson degeneracy and superfluidity of 4He
67.70.+n - Films (including physical adsorption)