Физика Низких Температур: Том 25, Выпуск 8-9 (Август 1999), c. 850-856    ( к оглавлению , назад )

Superconducting and normal properties of the set of Mo/Si superlattices with variable Si layer thickness

M. Yu. Mikhailov, O. I. Yuzephovich, A. S. Pokhila, Yu. V. Bomze, N. Ya. Fogel, I. M. Dmitrenko

B. Verkin Institute for Low Temperature Physics and Engineering, National Academy of Sciences of Ukraine, 47 Lenin Ave., 310164 Kharkov, Ukraine
E-mail: fogel@ilt.kharkov.ua

S. A. Yulin

Kharkov State Polytechnic University, 21 Frunze St., 310002 Kharkov, Ukraine

A. S. Sidorenko, O. B. Moldovan

Institute of Applied Physics, 5 Academiei Str., 2028 Kishinev, Moldova

(Received March 15, 1999)


We report the results of the superconducting and kinetic parameter measurements (transition temperature Tc, parallel and perpendicular critical fields Hc2, resistivity in the normal state) on a set of Mo/Si superconducting superlattices with a constant metal layer thickness dMo=22 A and variable semiconducting one dSi(14-44 A ). Our data show a monotonic dependence of all measured parameters on dSi. It is found that the Josephson interlayer coupling energy depends exponentially on the spacer thickness. The data obtained allowed us to determine the characteristic electron tunneling length for amorphous silicon with high precision. It is equal to 3.9 A. Enhancement of interlayer coupling leads to the Mo/Si multilayer transition temperature increasing, in agreement with Horovitz theory and with the experimental data on high-Tc materials.

74.80.Dm -
74.25.-q - Properties of type I and type II superconductors
74.62.c -