Low Temperature Physics: 29, 196 (2003); https://doi.org/10.1063/1.1542440 (6 pages)
Физика Низких Температур: Том 29, Выпуск 3 (Март 2003), c. 263-269    ( к оглавлению , назад )

Low temperature electron transport on semiconductor surfaces

M. Lastapis, D. Riedel, A. Mayne, K. Bobrov, and G. Dujardin

Laboratoire de Photophysique Moleculaire, Batiment 210 Universite Paris-Sud, 91405 Orsay Cedex, France
E-mail: gerald.dujardin@ppm.u-psud.fr

Received October 2, 2002

Аннотация

The low temperature electron transport on semiconductor surfaces has been studied using an ultra high vacuum, variable temperature Scanning Tunneling Microscope (STM). The STM I(V) spectroscopy recorded at various temperatures has enabled to investigate the temperature dependence (300 K to 35 K) of the surface conductivity of three different semiconductor surfaces: highly doped n-type Si(100), p-type Si(100), and hydrogenated C(100). Low temperature freezing of specific surface electronic channels on the higly doped n-type Si(100) and moderately doped p-type Si(100) surfaces could be achieved whereas the total surface conductivity on the hydrogenated C(100) surface can be frozen below only 180 K.

PACS:
72.20.Jv - Charge carriers: generation, recombination, lifetime, and trapping