Low Temperature Physics: 29, 876 (2003); https://doi.org/10.1063/1.1619362 (4 pages)
Физика Низких Температур: Том 29, Выпуск 9-10 (Сентябрь 2003), c. 1147-1151    ( к оглавлению , назад )

Activation spectroscopy of electronically induced defects in solid Ne

O.N. Grigorashchenko1, V.V. Rudenkov1, I.V. Khizhnyi1,2, E.V. Savchenko1, M. Frankowski3,4, A.M. Smith-Gicklhorn3, M.K. Beyer3, and V.E. Bondybey3

1 B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, 47 Lenin Ave., Kharkov 61103, Ukraine
E-mail: savchenko@ilt.kharkov.ua

2V. Karazin Kharkov National University, 4 Svobody Sq., Kharkov 61107, Ukraine
3Institute of Physical and Theoretical Chemistry, TU Munich, Garching 85747, Germany
E-mail: bondybey@ch.tum.de

4Institute of Fluid-Flow Machinery, Polish Academy of Sciences, 14 J. Fiszera, Gdansk 80-231, Poland


Thermally stimulated luminescence (TSL) and thermally stimulated exoelectron emission (TSEE) methods were used in combination with cathodoluminescence to probe electronically induced defects in solid Ne. The defects were generated by a low energy electron beam. For spectroscopic study we used Ar* centers in Ne matrix as a model system. At a temperature of 10.5 K a sharp decrease in the intensity of "defect" components in the luminescence spectrum was observed. From the analysis of the corresponding peak in the TSL and TSEE yields the trap depth energy was estimated and compared with available theoretical calculations. The obtained data support the model suggested by Song, that stable electronically induced defects have the configuration of second-neighbour Frenkel pairs.

78.60.Kn - Thermoluminescence
79.75.+g - Exoelectron emission