Department of Fundamental Electronics, Rzeszów University of Technology 35-959 Rzeszów, W. Pola 2, Poland
W. Strupiński, A. Jasik, and R. Jakiela
Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
Received July 21, 2004
The results of investigations of parallel magnetotransport in AlGaAs/GaAs and InGaAs/InAlAs/InP multiple quantum wells structures (MQW`s) are presented in this paper.
The MQW`s were obtained by metalorganic vapour phase epitaxy with different shapes of QW, numbers of QW and levels of doping. The magnetotransport measurements were performed in wide region of temperatures (0.5–300 K) and at high magnetic fields up to 30 T (B is perpendicular and current is parallel to the plane of the QW). Three types of observed effects are analyzed: quantum Hall effect and Shubnikov—de Haas oscillations at low temperatures (0.5–6 K) as well as
magnetophonon resonance at higher temperatures (77–300 K).PACS: 73.40.Hm -