Low Temperature Physics: 33, 147 (2007); https://doi.org/10.1063/1.2409651 (4 pages)
Физика Низких Температур: Том 33, Выпуск 2-3 (Февраль 2007), c. 207-210    ( к оглавлению , назад )

Quantum Hall effect in p-Ge/Ge1-xSix heterostructures with low hole mobility

Yu.G. Arapov, G.I. Harus, I.V. Karskanov, V.N. Neverov, N.G. Shelushinina, and M.V. Yakunin

Institute of Metal Physics RAS, Ekaterinburg 620041, Russia
E-mail: arapov@imp.uran.ru

O.A. Kuznetsov

Physico-Technical Institute at Nizhnii Novgorod State University, Nizhnii Novgorod, Russia

L. Ponomarenko and A. de Visser

Van der Waals—Zeeman Institute, University of Amsterdam, The Netherlands

Received July 31, 2006


The apparent insulator—quantum Hall—insulator (I—QH—I) transition for filling factor n = 1 has been investigated in p-type Ge/Ge1–xSix heterostructures with eFt / ħ ≈ 1. Scaling analysis is carried out for both the low- and high-field transition point. In low magnetic fields wct < 1 pronounced QH-like peculiarities for n = 1 are also observed in both the longitudinal and Hall resistivities. Such behavior may be evidence of a localization effect in the mixing region of Landau levels and is inherent for two-dimensional structures in a vicinity of the metal—insulator transition.

PACS: 73.40.–c Electronic transport interface structures;
PACS: 73.43.–f Quantum Hall effects.

Ключевые слова: Quantum Hall effects, heterostructures.