Low Temperature Physics: 34, 385 (2008); https://doi.org/10.1063/1.2913001 (3 pages)
Физика Низких Температур: Том 34, Выпуск 4-5 (Апрель 2008), c. 480-483    ( к оглавлению , назад )

Confinement effects on decay rate of surface electron states over liquid helium

S.S. Sokolov1, J.M. Villas-Bôoas2, Yu.P. Monarkha1, and Nelson Studart3

1B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Lenin Ave., Kharkov 61103, Ukraine
E-mail: sokolov@ilt.kharkov.ua

2Walter Schottky Institut, Technische Universität München, Am Coulombwall, D-85748 Garching, Germany

3Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, São Paulo, Brazil

Received November 23, 2007


The decay rate of excited states of surface electrons in liquid helium, trapped in a quantum dot system, is evaluated, taking into account the process of spontaneous radiation of two-ripplons with short wavelength. We find that the values of the decay rate in later process are rather higher than those for the one-ripplon process previously calculated. The upper-bound limit lifetime of excited states of surface electrons in a quantum dot is found to be t < 10-6–10-7 s.

PACS: 73.20.–r Electron states at surfaces and interfaces;
PACS: 73.20.–b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems;
PACS: 73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thinfilms, and low-dimensional structures.

Ключевые слова: quantum dot, two-ripplon process, lifetime of excited states.