Low Temperature Physics: 34, 812 (2008); https://doi.org/10.1063/1.2981394 (6 pages)
Физика Низких Температур: Том 34, Выпуск 10 (Октябрь 2008), c. 1033-1039    ( к оглавлению , назад )

Effect of next-to-nearest neighbor hopping on electronic properties of graphene

Y.F. Suprunenko1,2, E.V. Gorbar1, S.G. Sharapov3, and V.M. Loktev1

1Bogolyubov Institute for Theoretical Physics of the National Academy of Sciences of Ukraine 14-b Metrolohichna Str., Kiev 03680, Ukraine
E-mail: vloktev@bitp.kiev.ua

2Physics Department, Lancaster University, Lancaster, LA1 4YB, UK

3Physics Department, Western Illinois University, Macomb, Illinois 61455, USA
E-mail: s-sharapov@wiu.edu

Received April 2, 2008


In the tight-binding approximation, we take into account the next-to-nearest neighbor hopping in graphene that leads to nonrelativistic-like corrections in its low energy spectrum. The electronic density of states in a magnetic field is found and the fan diagram is plotted, which interpolates between those for the relativistic and nonrelativistic limiting cases. It is shown that the Berry phase for the system under consideration coincides exactly with its value for the relativistic system.

PACS: 71.70–d Level splitting and interactions;
PACS: 81.05.Uw Carbon, diamond, graphite.

Ключевые слова: graphene, electron density of states, magnetic field, Berry phase.