Low Temperature Physics: 37, 45 (2011); https://doi.org/10.1063/1.3551529 (4 pages)
Физика Низких Температур: Том 37, Выпуск 1 (Январь 2011), c. 56-59    ( к оглавлению , назад )

De Haas-van Alphen effect in 2D systems: application to mono- and bilayer graphene

Igor A. Luk’yanchuk

University of Picardie Jules Verne, Laboratory of Condensed Matter Physics, Amiens, France;
L.D. Landau Institute for Theoretical Physics, Moscow, Russia
E-mail: lukyanc@ferroix.net

Received July 29, 2010

Аннотация

Generalization of Shoenberg theory of de Haas–van Alphen magnetic oscillation in 2D metals for the case of electrons with arbitrary spectrum dispersion is used to propose the way to determine the nature of charge carriers in 2D conducting systems: mono- and bilayer graphene. We analyzed the analytical expression for the oscillating susceptibility as a function of chemical potential and distinguished its characteristic features for carriers with normal parabolic and Dirac-like linear spectra that can be detected experimentally.

PACS: 71.20.–b Electron density of states and band structure of crystalline solids;
PACS: 71.18.+y Fermi surface: calculations and measurements; effective mass, g factor;
PACS: 81.05.U– Carbon/carbon-based materials.

Ключевые слова: de Haas–van Alphen effect, graphene, 2D conducting systems.