Low Temperature Physics: 37, 235 (2011); https://doi.org/10.1063/1.3570930 (6 pages)
Физика Низких Температур: Том 37, Выпуск 3 (Март 2011), c. 301-307    ( к оглавлению , назад )

Zinc oxide for electronic, photovoltaic and optoelectronic applications

M. Godlewski1,2, E. Guziewicz1, K. Kopalko1, G. Łuka1, M.I. Łukasiewicz1, T. Krajewski1, B.S. Witkowski1, and S. Giera╕towska1

1Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland

2Department of Mathematics and Natural Sciences College of Science, Cardinal Stefan Wyszyсski University, Warsaw, Poland
E-mail: godlew@ifpan.edu.p

Received September 24, 2010

Аннотация

We demonstrate that the atomic layer deposition (ALD) technique has large potential to be widely used in a production of ZnO films for applications in electronic, photovoltaic (PV) and optoelectronic devices. Low growth temperature makes the ALD-grown ZnO films suitable for construction of various semiconductor/organic material hybrid structures. This opens possibilities of construction of novel devices based on very cheap organic materials. This includes organic light emitting diodes and PV cells of the third generation, as discussed in the present work.

PACS: 81.05.Dz II–VI semiconductors;
PACS: 85.40.Xx Hybrid microelectronics; thick films;
PACS: 75.50.Pp Magnetic semiconductors;
PACS: 81.05.Fb Organic semiconductors;
PACS: 88.40.jm Thin film III–V and II–VI based solar cells;
PACS: 88.40.jr Organic photovoltaics.

Ключевые слова: ZnO films, semiconductor/organic material hybrid structures, applications of ZnO.