Low Temperature Physics: 39, 299 (2013); https://doi.org/10.1063/1.4795003 (5 pages)
Физика Низких Температур: Том 39, Выпуск 3 (Март 2013), c. 384-389    ( к оглавлению , назад )

Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory

N.V. Khotkevych and Yu.A. Kolesnichenko

B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Lenin Ave., Kharkov 61103, Ukraine
E-mail: kolesnichenko@ilt.kharkov.ua

J.M. van Ruitenbeek

Kamerlingh Onnes Laboratorium, Universiteit Leiden, Postbus 9504, 2300 Leiden, The Netherlands

Received November 12, 2012

Аннотация

We have found an asymptotically exact solution of the Schrödinger equation for electrons tunneling into surface states through an inhomogeneous barrier of large amplitude. Assuming an elliptic dispersion law for the charge carriers the “standing wave” pattern in the conductance of the system resulting from the electron scattering by a single defect in the vicinity of the surface is analyzed.

PACS: 74.55.+v Tunneling phenomena: single particle tunneling and STM;
PACS: 85.30.Hi Surface barrier, boundary, and point contact devices;
PACS: 73.50.–h Electronic transport phenomena in thin films.

Ключевые слова: STM, electron tunneling, surface states, single defect, electron scattering.