B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Pr. Nauky, Kharkiv 61103, Ukraine
Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
Centre of Low Temperature Physics, Faculty of Science, P.J. Šafárik University and Institute of Experimental Physics SAS, 9 Park Angelinum, Košice 041 54, Slovakia
National Technical University “Kharkiv Polytechnic Institute”, 21 Frunze Str., Kharkov 61002, Ukraine
Received October 20, 2015
Phonon and electron spectra of metallic bigraphene are analyzed in the presence of step-edge crystal imperfection. Different geometries of step-edge are considered. The dynamic planar stability of the considered structure is proved for temperatures above the ambient. The number of phonon states is shown to grow near the K-point of the first Brillouin zone, compared to pristine graphene. It is found, that this type of defects causes substantially non-uniform distribution of electron states and the pronounced increase in the number of states with energies close to Fermi energy can be expected in electron spectrum of the graphene-based compounds. The performed calculations are in good agreement with inelastic neutron, x-ray and Raman measurements.
PACS: 63.22.–m Phonons or vibrational states in low-dimensional structures and nanoscale materials; PACS: 73.22.–f Electronic structure of nanoscale materials and related systems; PACS: 73.22.Pr Electronic structure of graphene.