Low Temperature Physics: 42, 588 (2016); https://doi.org/10.1063/1.4959018
Физика Низких Температур: Том 42, Выпуск 7 (Июль 2016), c. 748-755 ( к оглавлению , назад )
Theoretical analysis of the kinetics of low-temperature defect recombination in alkali halide crystals
V.N. Kuzovkov1, A.I. Popov1, E.A. Kotomin1,2, A.M. Moskina1, E. Vasil'chenko3, and A. Lushchik3
1Institute of Solid State Physics, 8 Kengaraga Str., Riga LV 1063, Latvia
2Photochemistry Center, Russian Academy of Sciences Str., Moscow 1199911, Russia
3Institute of Physics, University of Tartu, 1 W. Ostwald Str., Tartu 50411, Estonia
Received April 25, 2016
We analyzed carefully the experimental kinetics of the low-temperature diffusion-controlled F, H center re-combination in a series of irradiated alkali halides and extracted the migration energies and pre-exponential parameters for the hole H centers. The migration energy for the complementary electronic F centers in NaCl was obtained from the colloid formation kinetics observed above room temperature. The obtained parameters were compared with data available from the literature.
PACS: 61.72.Cc Kinetics of defect formation and annealing
Ключевые слова: alkali halides; defect; diffusion; reaction; ionizing radiation.
Published online: May 25, 2016