Low Temperature Physics: 42, 698 (2016); https://doi.org/10.1063/1.4960497
Физика Низких Температур: Том 42, Выпуск 8 (Август 2016), c. 887-891    ( к оглавлению , назад )

Surface plasmon-polariton resonance at diffraction of THz radiation on semiconductor gratings

I.S. Spevak1, A.A. Kuzmenko1, M. Tymchenko1, V.K. Gavrikov2, V.M. Shulga2, J. Feng3, H.B. Sun3, Yu.E. Kamenev1, and A.V. Kats1

1O. Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine 12 Ac. Proskury, Kharkiv 61085, Ukraine
E-mail: stigan@rambler.ru

2Institute of Radio Astronomy of the National Academy of Sciences of Ukraine 4, Chervonopraporna, Kharkiv 61002, Ukraine

3Jilin University, 2699 Qianjin Str., Changchun 130012, China

Received March 16, 2016

Аннотация

Resonance diffraction of THz hidrogen cyanide laser radiation on a semiconductor (InSb) grating is studied both experimentally and theoretically. The specular reflectivity suppression due to the resonance excitation of the THz surface plasmon-polariton is observed on a pure semiconductor grating and on semiconductor gratings covered with a thin dielectric layer. The dielectric coating of the grating results in the resonance shift and widening depending both on the layer thickness and dielectric properties. A simple analytical theory of the resonance diffraction on rather shallow gratings covered with a dielectric layer is presented, and the results are in a good accordance with the experimental data. Analytical expressions for the resonance shift and broadening are essential for the resonance properties understanding and useful for sensing data interpretation of the agents deposited on the grating surface.

PACS: 42.25.Fx Diffraction and scattering.

Ключевые слова: plasmon-polariton, semiconductor, resonance, diffraction, grating.

Published online: June 24, 2016