Low Temperature Physics: 43, 110 (2017); https://doi.org/10.1063/1.4974190
Физика Низких Температур: Том 43, Выпуск 1 (Январь 2017), c. 132-142    ( к оглавлению , назад )

High-temperature quantum kinetic effect in silicon nanosandwiches

N.T. Bagraev1,2, V.Yu. Grigoryev2, L.E. Klyachkin1, A.M. Malyarenko1, V.A. Mashkov2, V.V. Romanov2, and N.I. Rul’2

1Ioffe Physical-Technical Institute, St. Petersburg 194021, Russia

2Peter the Great St. Petersburg Polytechnic University, St. Petersburg 195251, Russia
E-mail: impurity.dipole@mail.ioffe.ru

Received July 27, 2016

Аннотация

The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the quantum kinetic phenomena in weak magnetic fields at high-temperatures up to the room temperature. As a certain version noted above we present the first findings of the high temperature de Haas-van Alphen, 300 K, quantum Hall, 77 K, effects as well as quantum conductance staircase in the silicon sandwich structure that represents the ultra-narrow, 2 nm, p-type quantum well (Si-QW) confined by the delta barriers heavily doped with boron on the n-type Si (100) surface.

PACS: 73.50.–h Electronic transport phenomena in thin films;
PACS: 73.23.Ad Ballistic transport.

Ключевые слова: de Haas–van Alphen effect, quantum Hall effect, silicon nanosandwich, single magnetic flux quantum, edge channel, negative-U dipole boron center.

Published online: November 25, 2016