Физика Низких Температур: Том 43, Выпуск 10 (Октябрь 2017), c. 1515-1521    ( к оглавлению , назад )

Germanium quantum well with two subbands occupied: kinetic properties

I.B. Berkutov1,2,3, V.V. Andrievskii1,2, Yu.F. Komnik1, and O.A. Mironov2,4

1B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Nauky Ave., Kharkiv 61103, Ukraine
E-mail: Andrievskii@ilt.kharkov.ua

2International Laboratory of High Magnetic Fields and Low Temperatures, 53-421 Wroclaw, Poland

3Department of Physics, North Carolina State University, Raleigh, NC 27695, USA
4Department of Physics, University of Warwick, Coventry CV4 7AL, UK

Received February 7, 2017


Multisubband transport of the p-type Si0.4Ge0.6/Ge/Si0.4Ge0.6 heterostructure has been investigated by means of magnetotransport measurements at low temperatures and high magnetic fields. Two frequency Shubnikov–de Haas oscillations indicate occupation of two subbands. This allows us to determine the densities and mobilities of the charge carriers on each subband. Shubnikov–de Haas oscillations reveal two 2D conduction subbands with carrier effective masses of 0.112m0 and 0.131m0. The quantum Hall ferromagnetic states which results from the crossing of two Landau levels with opposite spin and different subband was observed in SiGe systems for the first time.

PACS: 72.20.My Galvanomagnetic and other magnetotransport effects;
PACS: 73.20.Fz Weak or Anderson localization.

Ключевые слова: semiconductor heterostructure, magnetotransport, Shubnikov–de Haas oscillations.

Published online: August 27, 2017