Low Temperature Physics: 44, 252 (2018); https://doi.org/10.1063/1.5024546
Физика Низких Температур: Том 44, Выпуск 3 (Март 2018), c. 332-337 ( к оглавлению , назад )
Dissipation effects in superconducting heterostructures with tungsten nanorods as weak links
V.E. Shaternik1, A.P. Shapovalov2, O.Yu. Suvorov1, E.S. Zhitlukhina3,4, M.A. Belogolovskii1,4, P. Febvre5, and A.A. Kordyuk1
1G.V. Kurdyumov Institute for Metal Physics, National Academy of Sciences of Ukraine 36 Academician Vernadsky Blvd., Kyiv 03142, Ukraine
2V.N. Bakul Institute for Superhard Materials, National Academy of Sciences of Ukraine 2 Avtozavodskaya Str., Kyiv 04074, Ukraine
3O.O. Galkin Donetsk Institute for Physics and Engineering, National Academy of Sciences of Ukraine 46 Nauki Ave., Kyiv 03028, Ukraine
4Vasyl’ Stus Donetsk National University, 21 600-richya Str., Vinnytsia 21021, Ukraine
5Superconducting Electronics Group, IMEP-LAHC – CNRS UMR 5130, Université Savoie Mont Blanc Le Bourget du Lac Cedex 73376, France
Received November 24, 2017
Thin-film hybrid heterostructures formed by superconducting molybdenum-rhenium-alloy films with a critical temperature of about 9 K and nanoscale silicon-based semiconducting interlayers with metallic tungsten nanorods have been fabricated and studied. Current-voltage characteristics of the junctions were measured at 4.2 K and under influence of 11 GHz microwave irradiation. The evidence of a quasi-one-dimensional transport through the tungsten weak links disrupted by phase-slip centers was revealed in MoRe/doped Si/MoRe trilayers under irradiation by a high-frequency field. Also, measured current-voltage characteristics of five-layer MoRe/doped Si/MoRe/doped Si/MoRe devices exhibit a strong influence of a dissipation state in the MoRe interlayer. Namely, the switching from a superconducting state with low dissipation to a finite-conductance regime can be initiated by the emergence of an extra phase-slip center in the MoRe interlayer. Possible physical mechanisms of the two findings are discussed.
PACS: 85.25.Cp Josephson devices; 73.21.Hb Quantum wires; 74.40.Gh Nonequilibrium superconductivity.
Ключові слова: Josephson junction, weak link, quasi-one-dimensional transport, phase-slip events, microwave irradiation.
Published online: January 25, 2018